SK hynix merges DRAM and NAND into a single package for faster AI performance

Forward-looking: Major memory manufacturers are seeking to expand their production capabilities to meet the industry's ever-growing demand for chips. SK hynix is aiming even higher, planning significant enhancements for AI workloads running on mobile and other edge devices.

According to multiple Korean sources, SK hynix is developing a new type of computer memory aimed at accelerating local workloads. The High-Bandwidth Storage memory expands on the previously introduced High Bandwidth Flash technology by combining mobile DRAM and NAND Flash components in devices for portable computing.

HBS is specifically designed to deliver higher performance for AI workloads in smartphones, tablets, and other mobile devices, sources said. The new chips may stack up to 16 layers of DRAM and NAND memory, interconnected through vertical wire fan-out elements.

SK hynix first implemented VFO-based DRAM products with the Apple Vision Pro, but HBS adds complexity by integrating NAND Flash chips as well. The Korean ...