Liquid gold and tungsten form the bilayer substrate for this process

Chinese researchers have developed a wafer-scale 2D semiconductor growth method that operates roughly 1,000x faster than conventional techniques.

The team from the Institute of Metal Research reengineered the chemical vapor deposition process by introducing a liquid gold and tungsten bilayer as the substrate.

This method enabled wafer-scale growth of monolayer tungsten silicon nitride films with tunable doping properties.

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