Faster than SRAM! New flash memory tech from China is millions of times faster than NAND rivals from US, Japan or Korea - but please change its name

• Chinese researchers have developed super-fast non volatile flash memory
• Graphene channel enables 400 picosecond write speed and persistent storage
• "PoX" device targets AI bottlenecks with low power, high speed performance

A research team in China has developed what claims is the fastest reported non-volatile semiconductor memory device to date, with a write speed of one bit every 400 picoseconds.

The unfortunately named “PoX” (Phase-change Oxide), is a two-dimensional graphene-channel flash device developed at Fudan University in Shanghai.

The team built the device using a Dirac graphene channel combined with a charge-trapping stack. It operates faster than the system-level access times typically associated with volatile memory types like SRAM and DRAM, which usually fall between 1 and 10 nanoseconds. A picosecond is one-thousandth of a nanosecond.

Paving the way for its future applications

Volatile memory like SRAM and DRAM offers high speed but loses ...