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Samsung begins production of 14nm EUV DDR5 DRAM, unlocks speeds of up to 7.2 Gbps


Something to look forward to: Samsung has announced that it's begun mass producing 14-nanometer (nm) DRAM, the industry's smallest, that will be formed on extreme ultraviolet (EUV) technology. The number of EUV layers has been increased to five to "deliver today's finest, most advanced DRAM process for its DDR5 solutions."

Taking advantage of the latest DDR5 standard, Samsung says its 14nm DRAM will help unlock "unprecedented speeds" of up to 7.2 gigabits per second. Comparatively, it's more than twice the speed of DDR4 of up to 3.2Gbps.

Due to applying five EUV layers -- a process that enables the industry’s highest DRAM bit density -- Samsung will increase overall wafer productivity by around 20 percent. The 14nm process will allow power consumption to be reduced by nearly 20 percent compared to previous-generation DRAM chips. The company stressed the importance of EUV technology, particularly its ability ...


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