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Nitride ferroelectric semiconductors for next-generation electronics

Postdoctoral researchers Ding Wang (left) and Ping Wang (right) check the surface of a single-crystalline ferroelectric ScAlN wafer grown utilizing molecular beam epitaxy. Credit: Robert Coelius

For the first time, researchers achieved single-crystalline high quality ferroelectric III-V semiconductors that can be integrated into existing platforms for a broad range of ferroelectric, electronic, optoelectronic, and photonic device applications.

The ferroelectric semiconductor was made using a molecular beam epitaxy (MBE) system, which is already used to manufacture mainstream nitride-based devices.

Their achievement paves the way to a new generation of semiconductors that offer post-Moore's Law performance with a wide variety of applications.

"From a scientific point of view, we were very excited to work on this," said Zetian Mi, a professor of Electrical and Computer Engineering who led the research. "We wanted to see if we could create a ferroelectric III-V semiconductor by MBE, which was seen as a big challenge ...

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