For the first time, researchers achieved single-crystalline high quality ferroelectric III-V semiconductors that can be integrated into existing platforms for a broad range of ferroelectric, electronic, optoelectronic, and photonic device applications.
The ferroelectric semiconductor was made using a molecular beam epitaxy (MBE) system, which is already used to manufacture mainstream nitride-based devices.
Their achievement paves the way to a new generation of semiconductors that offer post-Moore's Law performance with a wide variety of applications.
"From a scientific point of view, we were very excited to work on this," said Zetian Mi, a professor of Electrical and Computer Engineering who led the research. "We wanted to see if we could create a ferroelectric III-V semiconductor by MBE, which was seen as a big challenge ...
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